High-quality gate oxide formed at 150 °C for flexible electronics

Published 2014 View Full Article

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Title
High-quality gate oxide formed at 150 °C for flexible electronics
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 8S1, Pages 08LC05
Publisher
Japan Society of Applied Physics
Online
2014-07-23
DOI
10.7567/jjap.53.08lc05
References
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