Etchant-free and damageless transfer of monolayer and bilayer graphene grown on SiC
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Etchant-free and damageless transfer of monolayer and bilayer graphene grown on SiC
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 11, Pages 115101
Publisher
Japan Society of Applied Physics
Online
2014-10-09
DOI
10.7567/jjap.53.115101
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Etchant-free and damageless transfer of monolayer and bilayer graphene grown on SiC
- (2014) Shinichi Tanabe et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- A facile process for soak-and-peel delamination of CVD graphene from substrates using water
- (2014) Priti Gupta et al. Scientific Reports
- Simple Readout Channel Model of Super-Resolution Near-Field Structure Disk System
- (2013) Takaya Tanabe et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Layer-Resolved Graphene Transfer via Engineered Strain Layers
- (2013) J. Kim et al. SCIENCE
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- (2012) Shinichi Tanabe et al. Applied Physics Express
- Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
- (2011) Kayoung Lee et al. NANO LETTERS
- Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
- (2011) Kai Yan et al. NANO LETTERS
- Electronic transport in two-dimensional graphene
- (2011) S. Das Sarma et al. REVIEWS OF MODERN PHYSICS
- Layer-by-Layer Transfer of Multiple, Large Area Sheets of Graphene Grown in Multilayer Stacks on a Single SiC Wafer
- (2010) Sakulsuk Unarunotai et al. ACS Nano
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- (2010) Shinichi Tanabe et al. Applied Physics Express
- Epitaxial few-layer graphene: towards single crystal growth
- (2010) H Hibino et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Electronic transport in polycrystalline graphene
- (2010) Oleg V. Yazyev et al. NATURE MATERIALS
- Towards a quantum resistance standard based on epitaxial graphene
- (2010) Alexander Tzalenchuk et al. Nature Nanotechnology
- Graphene photonics and optoelectronics
- (2010) F. Bonaccorso et al. Nature Photonics
- Quantum oscillations and quantum Hall effect in epitaxial graphene
- (2010) Johannes Jobst et al. PHYSICAL REVIEW B
- Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors
- (2009) Sakulsuk Unarunotai et al. APPLIED PHYSICS LETTERS
- Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
- (2009) T. Shen et al. APPLIED PHYSICS LETTERS
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
- (2009) Konstantin V. Emtsev et al. NATURE MATERIALS
- Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
- (2009) C. Riedl et al. PHYSICAL REVIEW LETTERS
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- (2009) X. Li et al. SCIENCE
- Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2
- (2008) Dong Su Lee et al. NANO LETTERS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started