Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers

Published 2013 View Full Article

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Title
Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 4S, Pages 04CF01
Publisher
IOP Publishing
Online
2013-02-20
DOI
10.7567/jjap.52.04cf01

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