Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers

标题
Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 4S, Pages 04CF01
出版商
IOP Publishing
发表日期
2013-02-20
DOI
10.7567/jjap.52.04cf01

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