Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors

Title
Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 8R, Pages 080202
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.50.080202

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started