Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors

标题
Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 8R, Pages 080202
出版商
Japan Society of Applied Physics
发表日期
2013-12-21
DOI
10.7567/jjap.50.080202

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