Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors

Published 2013 View Full Article

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Title
Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 10R, Pages 104303
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.50.104303

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