Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors

标题
Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors
作者
关键词
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出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 10R, Pages 104303
出版商
Japan Society of Applied Physics
发表日期
2013-12-21
DOI
10.7567/jjap.50.104303

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