Electric Double Layer Gate Field-Effect Transistors Based on Si

Published 2010 View Full Article

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Title
Electric Double Layer Gate Field-Effect Transistors Based on Si
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 4, Pages 04DK06
Publisher
Japan Society of Applied Physics
Online
2010-04-20
DOI
10.1143/jjap.49.04dk06

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