Electric Double Layer Gate Field-Effect Transistors Based on Si

标题
Electric Double Layer Gate Field-Effect Transistors Based on Si
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 4, Pages 04DK06
出版商
Japan Society of Applied Physics
发表日期
2010-04-20
DOI
10.1143/jjap.49.04dk06

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