A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition

标题
A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 3, Pages 03B019
出版商
Japan Society of Applied Physics
发表日期
2009-03-23
DOI
10.1143/jjap.48.03b019

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