Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

标题
Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 4, Pages 04C091
出版商
Japan Society of Applied Physics
发表日期
2009-04-20
DOI
10.1143/jjap.48.04c091

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