期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 48, 期 11, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.48.111102
关键词
-
资金
- New Energy and Industrial Technology Development Organization (NEDO) Under the Ministry of Economy Trade and Industry of Japan
Tensile-strained Ge is a promising material for Si-based optoelectronic integratod circuits and next-generation high-performance multifunction solar cells. We have grown highly tensile-strained Ge films on strain-relaxed InxGa1-xAs virtual substrates using solid-source molecular beam epitaxy. The tensile strain in a Ge film is controlled over a wide range from 0 40 to 1 55% by changing the In mole fraction in InxGa1-xAs buffer layers The 1 55% tensile strain achieved is much higher than previously reported values. These results demonstrate the usefulness of the InxGa1-xAs buffer method for investigating the properties of tensile-strained Ge. (C) 2009 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据