Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates

出版年份 2015 全文链接

标题

作者

关键词

MBE, 2D semiconductors, ZrSe, 2, films, ZrSe, 2, /MoSe, 2, heterostructures, Band alignment, Band structure

出版物

Volume 147, Issue -, Pages 269-272

出版商

Elsevier BV

发表日期

2015-05-03

DOI

10.1016/j.mee.2015.04.113

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