期刊
MICROELECTRONIC ENGINEERING
卷 147, 期 -, 页码 176-179出版社
ELSEVIER
DOI: 10.1016/j.mee.2015.04.057
关键词
Resistive switching random access memory (RRAM); Metal-insulator-semiconductor (MIS); Fast ramped voltages; Time domain measurements
资金
- Spanish MINECO
- Spanish ERDF [TEC2013-45638-C3-1-R]
- Generalitat de Catalunya [2014SGR-384]
- Spanish MINECO [TEC2011-27292-C02-02]
The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain. Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions. (C) 2015 Elsevier B.V. All rights reserved.
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