Inserting an i-ZnO layer to increase the performance of p-Si/n-ZnO heterojunction photodetectors

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Inserting an i-ZnO layer to increase the performance of p-Si/n-ZnO heterojunction photodetectors
Authors
Keywords
Heterojunction photodetectors (HPDs), Zinc-oxide (ZnO), Responsivity, P–i–n diode, Leakage current
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 39, Issue -, Pages 132-135
Publisher
Elsevier BV
Online
2015-05-21
DOI
10.1016/j.mssp.2015.05.006

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.