期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 39, 期 -, 页码 132-135出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.05.006
关键词
Heterojunction photodetectors (HPDs); Zinc-oxide (ZnO); Responsivity; P-i-n diode; Leakage current
类别
资金
- National Science Council of the Republic of China, Taiwan [NSC 102-2112-M-415-004-MY3]
By inserting an intrinsic-zinc oxide (i-ZnO) layer into conventional p-Si/n-ZnO (p-n) heterojunction photodetectors (HPDs), the structure of p-Si/i-ZnO/n-ZnO (p-i-n) was prepared. It is evident that the i-ZnO layer could effectively reduce leakage current by about three orders, which leads to rectification ratio increasing from 70 to 6.6 x 10(4) for p-n and p-i-n HPDs, respectively, at +2 V bias-voltage. With bias-voltages, the responsivity of p-n HPDs shows less variation. In contrast, the p-i-n HPDs demonstrate a greatly increasing in ultraviolet (IN) response. Such a result causes the UV (350 nm)-to-visible (550 nm) rejection ratio is enhanced from 14.1 to 39.7 for p-n and p-i-n HPDs, respectively. The UV response of p-i-n HPDs is roughly proportional to bias-voltages, however the p-n HPDs has less responsivity dependence on bias-voltages. Related mechanisms are studied here. (C) 2015 Elsevier Ltd. All rights reserved.
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