期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 39, 期 -, 页码 582-586出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.05.065
关键词
beta-Ga2O3 thin film; ICP etching; SF6; Dry etching
类别
资金
- National Natural Science Foundation of China [61223005, 61376046, 11405017]
- Fundamental Research Funds for the Central Universities [DUT12LK22, DUT13RC205]
- Research Fund for the Doctoral Program of Higher Education [20110041120045]
- Liaoning Provincial Natural Science Foundation of China [2014020004]
- Jiangxi Provincial Natural Science Foundation of China [20133ACB20005]
Beta phase Gallium trioxide (beta-Ga2O3) thin film was grown by metal organic chemical vapor deposition technology. Mixture gases of SF6 and Ar were used for dry etching of beta-Ga2O3 thin film by inductively coupled plasma (ICP). The effect of SF6/Ar (etching gas) ratio on etch rate and film etching damage was studied. The etching rate and surface roughness were measured using F20-UN thin film analyzer and atomic force microscopy showing that the etching rate in the range between 30 nm/min and 35 nm/min with an improved surface roughness was obtained when the reactive mixed gas of SF6/Ar was used. The analysis of X-ray diffraction and transmission spectra further confirmed the non-destructive crystal quality. This work demonstrates that the properly proportioned mixture gases of SF6/Ar is suitable for the dry etching of beta-Ga2O3 thin film by ICP and can serve as a guide for future beta-Ga2O3 device processing. (C) 2015 Elsevier Ltd. All rights reserved.
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