28 nm 50% Power-Reducing Contacted Mask Read Only Memory Macro With 0.72-ns Read Access Time Using 2T Pair Bitcell and Dynamic Column Source Bias Control Technique
28 nm 50% Power-Reducing Contacted Mask Read Only Memory Macro With 0.72-ns Read Access Time Using 2T Pair Bitcell and Dynamic Column Source Bias Control Technique
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