Article
Chemistry, Multidisciplinary
Kuan-Yu Chen, Prabhat K. Tripathy, Kunal Mondal, Hongliang Zhang, Adrien Couet, Joseph B. Andrews
Summary: Silicon carbide nanowires (SiC NWs) have the potential to enable the development of solution-processable electronics in harsh environments. The use of nanoscale SiC allows for dispersion in liquid solvents while retaining the resilience of bulk SiC. This study demonstrates the fabrication of SiC NW Schottky diodes and investigates their performance under elevated temperatures and proton irradiation, showing high-temperature tolerance and irradiation resistance.
Article
Engineering, Electrical & Electronic
Ratul K. Baruah, Bikram K. Mahajan, Yen-Pu Chen, Roy P. Paily
Summary: Silicon carbide is chosen for harsh environment applications due to its high critical electric field and radiation tolerance. Junctionless transistors show better performance than conventional MOSFETs at high temperatures.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Energy & Fuels
Neville McNeill, Dimitrios Vozikis, Rafael Pena-Alzola, Shuren Wang, Richard Pollock, Derrick Holliday, Barry W. Williams
Summary: This article presents a gate driver circuit with all-magnetic isolation for driving silicon carbide (SiC) power devices in a three-level T-type bridge-leg. The circuit addresses the issue of rapid common-mode voltage changes in SiC devices with an arrangement of transformers providing drive signals and power to the devices. The high-frequency carrier phase-switching technique is used to reduce the number of transformers. The circuit is demonstrated in a 540 V bridge-leg constructed around SiC JFETs.
Article
Engineering, Electrical & Electronic
Jie Yang, Xiaobo Guo
Summary: In this article, a custom-built silicon carbide (SiC) junction field-effect transistor (JFET) has been characterized, and a 60 MHz voltage-controlled oscillator (VCO) based on this SiC JFET has been designed and fabricated using low temperature co-fired ceramic (LTCC) process. The test results of the VCO prototype show that the proposed SiC JFET VCO can operate from 25 degrees C to 500 degrees C. An RF signal of 50dB above the noise floor is generated, and a tuning gain of 9.22 kHz/V is achieved at 500.C. The proposed SiC JFET VCO can serve as a fundamental building block for wireless sensing or data communication in extreme temperature industrial and space applications.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2023)
Article
Engineering, Electrical & Electronic
Jiarui Mo, Luke M. Middelburg, Bruno Morana, H. W. van Zeijl, Sten Vollebregt, Guoqi Zhang
Summary: This study focuses on the design and fabrication of surface micromachined Pirani gauges compatible with state-of-the-art Silicon Carbide CMOS technology, which improves harsh environment adaptability and reduces packaging complexity. The SiC-based Pirani gauges demonstrate better endurance in high-temperature environments compared to traditional Si-based gauges.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki
Summary: This study reports the successful operation of 4H-silicon carbide (SiC) MOSFET and integrated electronic circuit at temperatures up to 500 degrees C, with the reliability of metal/SiC contact playing a crucial role. The experimental results show that the voltage gain of the amplifier increases with temperature up to 300 degrees C, but slightly decreases above 300 degrees C.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Polymer Science
Zhijin Zhang, Tian Liang, Zhenglong Jiang, Xingliang Jiang, Jianlin Hu, Guohui Pang
Summary: Polymer insulators using silicone rubber materials have replaced traditional porcelain and glass insulators in power systems due to their lightweight and easy installation. However, these insulators can experience aging when being exposed to harsh outdoor environments. In this study, the aging characteristics of silicone rubber samples in high altitude, salt fog, and acid environments were analyzed using Fourier transform infrared spectroscopy (FTIR). The results revealed that the silicone rubber degraded to some extent in harsh environments, leading to the breaking of the main chain, reduction in polymerization degree, and decrease in hydrophobic functional groups. FTIR can be used to analyze the aging phenomenon of polymers.
Article
Engineering, Electrical & Electronic
Matthew Spear, Hugh J. Barnaby, Trace Wallace, Jose Solano, Oliver Forman, Donald Wilson, Ivan Sanchez Esqueda, Aymeric Privat, Marek Turowski, Rudolph VonNiederhausern, Matthew J. Marinella
Summary: Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device exhibits a non-linear dependence on total ionizing dose (TID). A new model is proposed to account for the depletion region in the well under the buried oxide, resulting in a revised coupling factor that fits well to experimental data and simulations.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Chaobiao Lin, Na Ren, Hongyi Xu, Kuang Sheng
Summary: This article discusses the influence of the JFET width and JFET doping concentration on the static characteristics, C-V characteristics, and short-circuit (SC) reliability of 1.2-kV planar-gate silicon carbide (SiC) MOSFETs. The increase in JFET width leads to a decrease in specific ON-resistance, decrease in blocking voltage, and increase in reverse capacitance. The SC peak current initially increases and then decreases with an increase in JFET width, while the SC withstanding time keeps decreasing. Enhanced JFET doping is preferred as it improves the figure of merit and high-frequency figure of merit without sacrificing much SC reliability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Ceramics
Fabricio Eduardo Bortot Coelho, Nicolaj N. Kaiser, Giuliana Magnacca, Victor M. Candelario
Summary: The study successfully developed a ZrO2/SiC ultrafiltration membrane with high permeability and retention, strong mechanical strength. It can be applied in harsh environments such as industrial wastewater, urban sewage, and is suitable for industries like food and pharmaceuticals that require strict membrane cleaning and disinfection.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2021)
Article
Optics
Junhu Zhou, Jie You, Hao Ouyang, Runlin Miao, Xiang'ai Cheng, Tian Jiang
Summary: This study presents a theoretical analysis of a novel multi-channel light amplification photonic system on chip, utilizing the nonlinear Raman amplification phenomenon in silicon wire waveguides and a temperature insensitive Mach-Zehnder interferometer filter as demultiplexer. The system incorporates various optical effects to achieve thermal robustness and prevent thermal interference, showing promising potential for future applications.
CHINESE OPTICS LETTERS
(2022)
Article
Optics
Andrey A. Nikitin, Ilya A. Ryabcev, Aleksei A. Nikitin, Alexandr Kondrashov, Alexander A. Semenov, Dmitry A. Konkin, Andrey A. Kokolov, Feodor Sheyerman, Leonid Babak, Alexey B. Ustinov
Summary: The present work focuses on experimental investigations of a bistable silicon-on-insulator microring resonator. The resonator operates in a continuous-wave mode and demonstrates stable hysteresis response at the through and drop ports when the input power exceeds the threshold value. By flipping the optical input power, the output characteristics of the resonator can be conveniently switched between two steady states.
OPTICS COMMUNICATIONS
(2022)
Article
Chemistry, Physical
Zicheng Lu, Hong Zhou, Yi Wang, Yanxiang Liu, Tie Li
Summary: Silicon nanowire field-effect transistor (SiNW-FET) sensors have the capability of rapid, real-time, and label-free detection of charged molecules with high sensitivity and selectivity. By a combination of horizontal and vertical control, a novel fabrication approach for silicon nanowires has been developed, resulting in improved device uniformity and lower current fluctuation. The new approach shows a more accurate bio-analysis application of the silicon nanowire sensor.
Article
Engineering, Electrical & Electronic
Masaya Mochizuki, Masayuki Yamamoto, Hitoshi Umezawa, Yasunori Tanaka
Summary: Although silicon carbide integrated circuits (SiC ICs) have remarkable heat and radiation tolerances, the lack of performance in transistors is a significant hurdle to their widespread commercialization. This study focuses on improving transistors' performance by fabricating n-type lateral SiC JFETs with gate-all-around (GAA) structures. The results show that the GAA JFETs have high transconductance coefficients and little body bias effect, which makes them suitable for IC applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Matthias L. Vermeer, Raymond J. E. Hueting, Luca Pirro, Jan Hoentschel, Jurriaan Schmitz
Summary: Quantification of interface traps in double-gate fully depleted silicon-on-insulator transistors is crucial for accurate device modeling and technology development. A new method combining the g(m)/I-D method and a revised form of the k-sweep method was developed in this study, resulting in a typical trap density of 2*10^(11)cm^(-2)eV^(-1). However, the allocation of traps to the front or back interface is challenging, with at least a 20% error reported.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Keyao Sun, Emma Raszmann, Jun Wang, Xiang Lin, Rolando Burgos, Dong Dong, Dushan Boroyevich
Summary: This article presents an improved control circuit for series connection of SiC MOSFETs, which achieves higher blocking voltage and resolves the voltage imbalance issue during switching transient. The proposed control method has been validated through modeling, analysis, and experimental results, demonstrating its potential for medium-voltage high-current applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Yue Xu, Joshua Stewart, He Song, Li Cheng, Igor Cvetkovic, Rolando Burgos, Dushan Boroyevich
Summary: This article discusses the advantages of SiC-based converters, focuses on the high electric field intensity and initial partial discharge issues, and provides a methodology for E-field management with experimental verification.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Boran Fan, Jun Wang, Jianghui Yu, Slavko Mocevic, Yu Rong, Rolando Burgos, Dushan Boroyevich
Summary: This study proposes a new control method for modular multilevel converters to achieve voltage balancing within a single switching cycle. Experimental results demonstrate the feasibility of this approach.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Jayesh Kumar Motwani, Boran Fan, Yu Rong, Dushan Boroyevich, Dong Dong, Rolando Burgos
Summary: Modular multilevel converters (MMCs) are popular for high/medium-voltage applications, but their adoption is limited by large capacitor requirements. A new switching-cycle-balancing control has been proposed to significantly reduce the required capacitor capacity, allowing for MMC dc-dc operation. However, the effectiveness of the capacitor voltage balancing is affected by nonideal factors, making a closed-loop balancing scheme critical. This letter tackles the challenge of closed-loop balancing control and develops an effective scheme, validated using a custom-built 10-kV SiC mosfet-based MMC under 18-kV dc-link voltage.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Giampaolo Buticchi, Pat Wheeler, Dushan Boroyevich
Summary: Aviation is a major contributor to greenhouse gas emissions, driving the need for aircraft electrification to reduce pollution and improve flight efficiency. This article provides an overview of recent advancements and trends in aircraft electrification, referencing the global aviation roadmap.
PROCEEDINGS OF THE IEEE
(2023)
Article
Engineering, Electrical & Electronic
Yu Rong, Zhiyu Shen, Jun Wang, Jianghui Yu, Boran Fan, Slavko Mocevic, Dushan Boroyevich, Rolando Burgos
Summary: This article introduces the development of a PESNet 3.0 system network with sub-nanosecond synchronization error and gigabits-per-second data rate. The White Rabbit Network technology and simplified node-to-node phase-locked loop and improved precision time protocol model are used for frequency and phase locking. Finally, the experimental validation demonstrates the PESNet 3.0's synchronization error of +/- 0.5 ns at a 5 Gb/s data rate.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Yuliang Cao, Boran Fan, Yijie Bai, Vladimir Mitrovic, Dong Dong, Rolando Burgos, Dushan Boroyevich
Summary: This letter presents a method to further reduce common-mode noise and achieve DC voltage auto-balance in a symmetric three-level buck-boost converter. By connecting the input and output midpoints, the noise can be trapped inside the power converter, resulting in a significant reduction in common-mode noise. Additionally, a combination of bridged midpoints and coupled buck-boost inductor allows the converter to achieve the desired DC voltage auto-balance feature.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Yuliang Cao, Yijie Bai, Vladimir Mitrovic, Boran Fan, Dong Dong, Rolando Burgos, Dushan Boroyevich, Radha Sree Krishna Moorthy, Madhu Chinthavali
Summary: This article proposes a symmetric three-level (3-L) buck-boost converter to suppress common-mode noise. A planar coupled inductor is designed to reduce winding loss by 30%. A simplified real-time minimum rms current calculation method is found for closed-loop output control, and a decoupled mid-points balance control is proposed. The proposed converter achieves up to 25 dB CM noise reduction from 150 kHz to 30 MHz compared to a typical FSBB converter.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Ning Yan, Keyao Sun, Boran Fan, Dong Dong, Rolando Burgos, Dushan Boroyevich
Summary: This paper highlights the significance of the auxiliary power supply system in modular medium voltage SiC-based conversion systems and presents a system consisting of five individual converters to meet the requirements of high insulation capability, low common-mode coupling capacitance, high reliability, and a simple structure with a small converter size.
2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Xiang Lin, David Nam, Ning Yan, Joshua Stewart, Arthur Mendes, Dong Dong, Rolando Burgos, Dushan Boroyevich
Summary: This paper presents a 13.8 kV / 1.1MVA 3-phase 5-level flying capacitor converter design with emerging 10 kV SiC MOSFET for medium voltage applications. The paper focuses on the selection method of the flying capacitor values and presents the design of different components including the converter layout arrangement, gate driver design, and auxiliary power system design. The testing of different components and the result of the phase leg are also shown in this paper.
2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Yijie Bai, Yuliang Cao, Vladimir Mitrovic, Boran Fan, Rolando Burgos, Dushan Boroyevich
Summary: With the development of energy storage systems, the FSBB converter, which allows for bi-directional power flow and wide voltage conversion capabilities, has gained popularity. The existing QCM approaches for FSBB have hindered its wide adoption due to complexity. To address this, a simplified four-quadrangle modulation was found, which eliminates the need for look-up tables or extra current detection. A small signal model was also proposed to aid compensator design. The proposed control scheme and small-signal model were verified through the implementation of a SiC-based 50kW FSBB converter.
2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC
(2023)
Article
Energy & Fuels
Chen-Ching Liu, Akshay Kumar Jain, Dushan Boroyevich, Igor Cvetkovic, Nitasha Sahani, Lung-An Lee, Jennifer Appiah-Kubi, Kevin P. P. Schneider, Francis K. K. Tuffner, Dan Ton
Summary: For power grids with high penetration of distributed energy resources (DERs), microgrids can provide operation and control capabilities for clusters of DERs and load. Furthermore, microgrids enhance resilience of the hosting bulk power grid if they are enabled to serve critical load beyond the jurisdiction of the microgrids.
IEEE OPEN ACCESS JOURNAL OF POWER AND ENERGY
(2023)
Proceedings Paper
Energy & Fuels
Vladimir Mitrovic, Igor Cvetkovic, Dushan Boroyevich, Joseph Wheeler, Robert Vance
Summary: Technology advancements in the past two decades have significantly transformed the way people live, interact, and work, more so than any previous technology in the last 100 years. Virginia Tech's FutureHAUS, which won first place in an international competition, demonstrates the use of advanced manufacturing concepts, prefabricated structures, and power electronics to revolutionize modern home design. This paper describes the implementation of an electronic energy system and an energy management algorithm to achieve a net-positive energy balance in the FutureHAUS.
2023 IEEE CONFERENCE ON POWER ELECTRONICS AND RENEWABLE ENERGY, CPERE
(2023)
Proceedings Paper
Automation & Control Systems
Vladimir Mitrovic, Boran Fan, Yuliang Cao, Yijie Bai, Rolando Burgos, Dushan Boroyevich
Summary: Communication inside a power converter provides hardware abstraction, flexibility, and distributed control. Through communication, the number of sensors in the system can be reduced and the controller hardware can be simplified.
2022 IEEE 23RD WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL 2022)
(2022)
Proceedings Paper
Automation & Control Systems
Jayesh Kumar Motwani, Boran Fan, Yu Rong, Jianghui Yu, Dong Dong, Dushan Boroyevich, Rolando Burgos
Summary: This paper introduces the advantages and limitations of Modular Multilevel Converters in DC-DC operation, and proposes two control techniques based on switching-cycle-balancing control (SCC). Research shows that there is still room for improvement in SCC, especially when the input/output voltage ratio of the converter is pre-determined.
2022 IEEE 23RD WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL 2022)
(2022)
