Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

出版年份 2012 全文链接

标题

Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

作者

关键词

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出版物

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Volume 59, Issue 6, Pages 3258-3264

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2012-12-12

DOI

10.1109/tns.2012.2223763

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