4.6 Article

Effect of post sulfurization temperature on the microstructure of Cu2ZnSn(S,Se)4 thin film

Journal

MATERIALS LETTERS
Volume 159, Issue -, Pages 32-34

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2015.06.067

Keywords

CZTSe thin films; CZTSSe; Sulfurization; Microstructure

Funding

  1. Natural Science Foundation of Fujian Province, China [2015J05096]
  2. National Key Project for Basic Research of China [2011CBA00200]
  3. National Basic Research Program of China (973 Program) [2012CB922001]

Ask authors/readers for more resources

Sulfurization of Cu2ZnSnSe4 (CZI'Se) thin film is an effective method to modify the properties of Cu2ZnSn (S,Se)(4) (CZTSSe) solar cell devices. The microstructure of CZTSSe is a critical factor for high efficient CZTSSe solar cell. However, the study of transformation in microstructure during sulfurization has still been far from sufficient. So CZTSe thin films were firstly grown through selenization of oxides precursors, and then converted into CZTSSe by sulfurization in this paper. The effect of post sulfurization temperature on the microstructure of CZTSSe thin film was investigated. (C) 2015 Elsevier B.V. All rights reserved.

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