Nonvolatile Boolean Logic Block Based on Ferroelectric Tunnel Memristor

Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation

(2014) Zhaohao Wang et al.   APPLIED PHYSICS LETTERS

Logic Computation in Phase Change Materials by Threshold and Memory Switching

(2013) M. Cassinerio et al.   ADVANCED MATERIALS

Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits

(2013) Hiwa Mahmoudi et al.   IEEE TRANSACTIONS ON MAGNETICS

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

(2013) Y. Li et al.   JOURNAL OF APPLIED PHYSICS

A physics-based compact model of ferroelectric tunnel junction for memory and logic design

(2013) Zhaohao Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices

(2012) C. David Wright et al.   ADVANCED FUNCTIONAL MATERIALS

A ferroelectric memristor

(2012) André Chanthbouala et al.   NATURE MATERIALS

Interface-induced room-temperature multiferroicity in BaTiO3

(2011) S. Valencia et al.   NATURE MATERIALS

Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture

(2010) Andrew Lyle et al.   APPLIED PHYSICS LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

(2010) S. Ikeda et al.   NATURE MATERIALS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE