Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 49, Issue 12, Pages 5620-5628
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-12-04
DOI
10.1109/tmag.2013.2278683
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking
- (2013) Dmitri E. Nikonov et al. PROCEEDINGS OF THE IEEE
- Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory
- (2013) Hiwa Mahmoudi et al. SOLID-STATE ELECTRONICS
- Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
- (2012) Yue Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Proposal of a Spin Torque Majority Gate Logic
- (2011) Dmitri E. Nikonov et al. IEEE ELECTRON DEVICE LETTERS
- Magnetic Tunnel Junction Logic Architecture for Realization of Simultaneous Computation and Communication
- (2011) Andrew Lyle et al. IEEE TRANSACTIONS ON MAGNETICS
- Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture
- (2010) Andrew Lyle et al. APPLIED PHYSICS LETTERS
- Micromagnetic simulations of a dual-injector spin transfer torque operated spin logic
- (2010) V. Höink et al. APPLIED PHYSICS LETTERS
- Two memristors suffice to compute all Boolean functions
- (2010) E. Lehtonen et al. ELECTRONICS LETTERS
- SPICE Macromodel of Spin-Torque-Transfer-Operated Magnetic Tunnel Junctions
- (2010) Jonathan D. Harms et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Communication Between Magnetic Tunnel Junctions Using Spin-Polarized Current for Logic Applications
- (2010) Andrew Lyle et al. IEEE TRANSACTIONS ON MAGNETICS
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Proposal for an all-spin logic device with built-in memory
- (2010) Behtash Behin-Aein et al. Nature Nanotechnology
- High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits
- (2009) Weisheng Zhao et al. IEEE TRANSACTIONS ON MAGNETICS
- Magnetic coupled spin-torque devices for nonvolatile logic applications
- (2009) Larkhoon Leem et al. JOURNAL OF APPLIED PHYSICS
- Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
- (2008) Shoun Matsunaga et al. Applied Physics Express
- Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
- (2008) S. Ikeda et al. APPLIED PHYSICS LETTERS
- Programmable Spintronic Logic Devices for Reconfigurable Computation and Beyond—History and Outlook
- (2008) Jian-Ping Wang et al. Journal of Nanoelectronics and Optoelectronics
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- New non-volatile logic based on spin-MTJ
- (2008) Weisheng Zhao et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now