Review
Chemistry, Analytical
Catherine Langpoklakpam, An-Chen Liu, Yi-Kai Hsiao, Chun-Hsiung Lin, Hao-Chung Kuo
Summary: This review provides a concise overview of the significance and unique architecture of vertical GaN MOSFETs, discusses their advantages and recent advancements, and suggests methods to enhance their breakdown voltage.
Article
Engineering, Electrical & Electronic
Jun Zhang, Jiayi Zhou, Yuhao Wang, Man Li, Ling Du, Jing Chen, Maolin Zhang, Jiafei Yao, Guobin Zhang, Huabin Sun, Yong Xu, Song Bai, Yufeng Guo
Summary: This letter proposes a novel organic field-effect transistor (OFET) called LDR-OFET, which achieves high breakdown voltage through a simple process and low cost. Experimental results validate the effectiveness of the proposed device and explore the physical nature of the breakdown mechanism. The LDR-OFET is expected to fill the gap in organic power devices and become a core component of future organic power integrated circuits.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Arnab Mukhopadhyay, Sayan Kanungo, Hafizur Rahaman
Summary: The research investigates the impact of three different stacking arrangements of bilayer MoS2 channel material on the behavior of MOSFET devices, highlighting the sensitivity of hole effective mass and performance tuning for p-MOSFET. The results show significant improvements in device characteristics with a tuned stacking arrangement, demonstrating enhanced on-state current and transconductance for p-MOSFET.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2021)
Article
Physics, Applied
Yuh-Chen Lin, G. Bruce Rayner, Jorge Cardenas, Aaron D. Franklin
Summary: In this study, NC-FETs based on 2D MoS2 using CMOS-compatible ferroelectric HfZrO2 were experimentally studied, showing significant improvement in subthreshold switching at shorter channel lengths, down to 20 nm. The analysis of the capacitive network indicated that the NC effect is enhanced by a larger magnitude of polarization in the ferroelectric, benefiting gate control and channel-length scaling.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Kee-Ryung Park, Hong-Baek Cho, Minseob Lim, Byung Kwon Jang, Jongsik Lee, ByungSeo Jeon, Yong-Ho Choa
Summary: Thermal conductive polymer nanocomposites were fabricated using graphene nanoplatelets (GNP) as conducting fillers under application of an electric field that avoids electric breakdown. The technique showed enhanced thermal conductivity and controlled assembly of conducting fillers without breakdown.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
L. Nela, J. Ma, C. Erine, P. Xiang, T. -H. Shen, V. Tileli, T. Wang, K. Cheng, E. Matioli
Summary: AlGaN/GaN nanowires containing multiple two-dimensional electron gas channels can be used to create high-electron-mobility tri-gate power transistors that exhibit low specific on resistances, enhancement-mode operation, improved dynamic behavior, and high breakdown voltages.
NATURE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Zhijun Lyu, Hongliang Lu, Chen Liu, Yuming Zhang, Yimen Zhang, Yi Zhu, Jiale Sun, Bin Lu, Ziji Jia, Mengqing Zhao
Summary: In this article, an accurate potential model of the ternary GSO-TFETs is presented, considering the quasi-mobile charges. For the first time, a potential-based analytical current model is developed to predict the face-tunnel process and line-tunnel current. The modeling results are validated with TCAD simulations and indicate the great potential of this model in commercial IC design.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Shimin Li, Yasushi Yamano, Yingsan Geng, Chaohai Zhang
Summary: Conditioning technology can significantly increase the insulation of vacuum interrupters. The article proposes a method to diagnose conditioning saturation using breakdown electric field and breakdown time obtained from a breakdown voltage waveform. The results show that the two parameters exhibit contrary and then the same trend during conditioning saturation, indicating its precise and efficient identification. This has significant guidance for industrial practice.
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION
(2023)
Article
Engineering, Electrical & Electronic
Chengji Jin, Jiacheng Xu, Jiani Gu, Jiayi Zhao, Xiaole Jia, Jiajia Chen, Huan Liu, Miaomiao Zhang, Yue Peng, Bing Chen, Ran Cheng, Yan Liu, Xiao Yu, Genquan Han
Summary: We experimentally investigated the disturb-free operations of multilevel cell (MLC) ferroelectric field-effect transistors (FeFETs) in a NAND array. We characterized the fabricated FeFET cells and investigated optimized schemes for stable writing of FeFET cells into multiple states. We proposed write and read schemes to achieve stable MLC operations of FeFET NAND arrays. This work provides a fundamental understanding of disturb-free MLC FeFET operations for NAND applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Benedikt Kostka, Daniel Herwig, Michael Hanf, Christian Zorn, Axel Mertens
Summary: Degradation caused by humidity affects the blocking characteristic of an insulated gate bipolar transistor (IGBT) module, leading to an increased leakage current and/or a reduced voltage blocking capability. The proposed measurement system enables the in situ detection of decreased breakdown voltage and increased leakage current, allowing for assessment of power module degradation when installed in a converter, primarily intended for wind power converters and as part of the system start-up procedure. The working principle has been validated on predamaged power modules in laboratory experiments, with the concept proving easy to integrate into existing inverter systems at a relatively low cost.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Linghua Jin, Huide Wang, Rui Cao, Karim Khan, Ayesha Khan Tareen, Swelm Wageh, Ahmed A. Al-Ghamdi, Shaojuan Li, Dabing Li, Ye Zhang, Han Zhang
Summary: Researchers have explored the use of ferroelectric materials to improve the performance of two-dimensional photonic and optoelectronic devices. Ferroelectrics can adjust the carrier concentration, mobility, and bandgap of two-dimensional materials, allowing for control over their photonic and optoelectronic properties. The polarization of ferroelectrics can be modulated by incident light, and the wavelengths of light can be tuned by switching the polarization, thereby enhancing the performance of two-dimensional photonic and optoelectronic devices. Two-dimensional materials have great potential in photonics and optoelectronics due to their tunable bandgap.
Article
Engineering, Electrical & Electronic
Shimin Li, Wei Yang, Xixi Jiang, Yasushi Yamano, Yingsan Geng, Zhiyuan Liu, Jianhua Wang, Chaohai Zhang
Summary: This article investigates the breakdown time and breakdown electric field characteristics in vacuum conditioning with impulse voltage under a uniform electric field. The study proposes a method for conditioning saturation judgment by combining breakdown time and breakdown electric field.
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION
(2022)
Article
Chemistry, Analytical
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang
Summary: A novel VDMOS device, S-FLI VDMOS, is proposed in this letter. The breakdown voltage and the specific on-resistance are optimized through the application of Breakdown Point Transfer technology and multiple layers of charge compensation blocks. The experimental results show improved performance compared to conventional Si VDMOS devices.
Article
Chemistry, Multidisciplinary
David Esseni, Riccardo Fontanini
Summary: The study correlates the macroscopic features of negative capacitance operation in ferroelectric materials to their underlying microscopic picture using comprehensive numerical simulations and simplified equations. It shows that the domain wall coupling constant plays a critical role in quasi static operation, while transient negative capacitance operation is less sensitive to this parameter. The research provides a better understanding of negative capacitance operation and a solid basis for designing future negative capacitance based devices through systematic comparison between simulations and experiments.
Article
Physics, Applied
Peter Oles, Alexander Breymesser, Oliver Blank, Peter Hadley
Summary: This study presents the characterization results of integrated vacuum gaps using cylindrical capacitors manufactured with standard semiconductor technology. The study reveals that the breakdown field of the vacuum gaps can reach up to 6 x 10^9 V/m under high electric fields, avoiding breakdown due to avalanche discharge. The study also finds that the tunneling current in the vacuum gaps occurs at higher voltages compared to equivalent dielectric layers.
APPLIED PHYSICS LETTERS
(2022)
