Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Published 2014 View Full Article

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Title
Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 7, Pages 2448-2453
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-06-07
DOI
10.1109/ted.2014.2325559

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