Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 61, Issue 7, Pages 2448-2453

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-06-07

DOI

10.1109/ted.2014.2325559

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