Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

(2012) Sourabh Khandelwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A 3-D Table-Based Method for Non-Quasi-Static Microwave FET Devices Modeling

(2012) Yunshen Long et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

(2012) Raymond S. Pengelly et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

(2010) Dawei Yan et al.   APPLIED PHYSICS LETTERS

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

(2010) Jungwoo Joh et al.   MICROELECTRONICS RELIABILITY

Physics-Based Compact Model for AlGaN/GaN MODFETs With Close-Formed $I$–$V$ and $C$–$V$ Characteristics

(2009) Xiaoxu Cheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analytical HFET $I$– $V$ Model in Presence of Current Collapse

(2008) Alexei Koudymov et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs

(2008) Miao Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES