Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

Modeling the impact of junction angles in tunnel field-effect transistors

(2012) Kuo-Hsing Kao et al.   SOLID-STATE ELECTRONICS

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

(2011) Genquan Han et al.   APPLIED PHYSICS LETTERS

Impact of field-induced quantum confinement in tunneling field-effect devices

(2011) William G. Vandenberghe et al.   APPLIED PHYSICS LETTERS

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

(2011) Kuo-Hsing Kao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Silicide Engineering to Boost Si Tunnel Transistor Drive Current

(2011) Daniele Leonelli et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Drain voltage dependent analytical model of tunnel field-effect transistors

(2011) Anne S. Verhulst et al.   JOURNAL OF APPLIED PHYSICS

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance

(2010) Kartik Ganapathi et al.   APPLIED PHYSICS LETTERS

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

(2010) Samarth Agarwal et al.   IEEE ELECTRON DEVICE LETTERS

Tunnel Field Effect Transistor With Raised Germanium Source

(2010) Sung Hwan Kim et al.   IEEE ELECTRON DEVICE LETTERS

Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width

(2010) Daniele Leonelli et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus

(2010) H. Carrillo-Nuñez et al.   JOURNAL OF APPLIED PHYSICS

Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator

(2009) D. Kazazis et al.   APPLIED PHYSICS LETTERS

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

(2008) Anne S. Verhulst et al.   IEEE ELECTRON DEVICE LETTERS

Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

(2008) Osama M. Nayfeh et al.   IEEE ELECTRON DEVICE LETTERS