1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method

Submicrometer Ultralow-Power TFT With 1.8 nm NAOS $ \hbox{SiO}_{2}/\hbox{20} \ \hbox{nm}$ CVD $\hbox{SiO}_{2}$ Gate Stack Structure

(2011) Yasushi Kubota et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low temperature fabrication of 5–10nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method

(2010) Yousuke Fukaya et al.   APPLIED SURFACE SCIENCE

Operation of a Novel Device With Suspended Nanowire Channels

(2010) Horng-Chih Lin et al.   IEEE ELECTRON DEVICE LETTERS

Ultralow-Power TFT With Gate Oxide Fabricated by Nitric Acid Oxidation Method

(2010) Taketoshi Matsumoto et al.   IEEE ELECTRON DEVICE LETTERS

Ultrathin SiO2 layer with an extremely low leakage current density formed in high concentration nitric acid

(2009) Woo-Byoung Kim et al.   JOURNAL OF APPLIED PHYSICS

Optical and chemical characterization of expanding thermal plasma-deposited carbon-containing silicon dioxide-like films

(2008) M. Creatore et al.   THIN SOLID FILMS

Nitric acid method for fabrication of gate oxides in TFT

(2007) Shigeaki Mizushima et al.   APPLIED SURFACE SCIENCE

AMOLED pixel driver circuits based on poly-Si TFTs: A comparison

(2007) Gaetano Palumbo et al.   INTEGRATION-THE VLSI JOURNAL