期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 2, 页码 385-392出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2175395
关键词
Driving circuit; liquid-crystal display (LCD); low power consumption; nitric acid oxidation of silicon (NAOS); thin-film transistor (TFT)
We have fabricated thin-film transistors (TFTs) and liquid-crystal displays (LCDs) with monolithic drivers on glass substrates and achieved ultralow power consumption by operating with a low power-supply voltage at 3 V. The gate insulator of the TFTs has a stack structure with an ultrathin interfacial SiO2 layer formed by nitric acid oxidation of silicon and a 40-nm-thick SiO2 layer formed by plasma-enhanced chemical vapor deposition. Owing to the TFTs with the thin gate insulator, the driving circuits of the LCDs can be operated at a supply voltage of 1.5 V, which is much lower than that of conventional LCDs of 10-15 V.
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