pMOSFET Performance Enhancement With Strained $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Channels

Layout Scaling of $\hbox{Si}_{1-x}\hbox{Ge}_{x} \hbox{-Channel}$ pFETs

(2011) Geert Eneman et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

(2011) Aneesh Nainani et al.   JOURNAL OF APPLIED PHYSICS

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

(2010) L. Hutin et al.   IEEE ELECTRON DEVICE LETTERS

Electrical TCAD Simulations of a Germanium pMOSFET Technology

(2010) Geert Hellings et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

(2009) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs

(2008) C.N. Chleirigh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES