Numerical Study of a Highly Scaled Bulk MOSFET With Block Oxide and Source/Drain-Tied Structure

Published 2011 View Full Article

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Title
Numerical Study of a Highly Scaled Bulk MOSFET With Block Oxide and Source/Drain-Tied Structure
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 5, Pages 1381-1387
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-04-07
DOI
10.1109/ted.2011.2120614

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