Numerical Study of a Highly Scaled Bulk MOSFET With Block Oxide and Source/Drain-Tied Structure

出版年份 2011 全文链接

标题

作者

关键词

出版物

Volume 58, Issue 5, Pages 1381-1387

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2011-04-07

DOI

10.1109/ted.2011.2120614

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