☆ 4.6 Article

A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES

卷 57, 期 6, 页码 1195-1200

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

DOI: 10.1109/TED.2010.2045670

关键词

Counter-doping; implantation; interface trap density; mobility; MOSFET; nitridation; nitrogen; oxidation; 4H-SiC

类别

Engineering, Electrical & Electronic Physics, Applied

资金

U.S. Army Research Laboratory

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摘要

Detailed investigations on the pre-oxidation nitrogen implantation process for the improvement of channel mobility in 4H-SiC MOSFETs are reported. Comparisons with conventional thermally nitrided gate oxides are highlighted. The results of a nitrogen dose dependence study indicate that higher N implantation doses lead to higher peak field-effect mobilities but lower threshold voltages. This apparently correlates with the interface trap density near the conduction band of 4H-SiC, as previous work suggests, but an alternate mechanism associated with counter doping of the MOSFET p-well via N implantation is proposed here. Analysis of the experimental results suggests that the counter-doping mechanism is more likely to be the dominant effect.

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