期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 57, 期 2, 页码 368-372出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2037458
关键词
AlN buffer; field-effect transistors (FETs); GaN; metal-insulator-semiconductor (MIS) devices; nonpolar; normally off operation
Nonpolar AlGaN/GaN metal-insulator-semiconductor-heterojunction field-effect transistors (MIS-HFETs) with a complete normally off operation have been demonstrated for the first time. To realize the normally off operation of the MIS-HFETs, a 2-nm-thick SiN (as an insulator) and GaN-based nonpolar epitaxial layers that are free from polarization charges are employed. We have found that a thicker nonpolar AlN buffer layer achieves a GaN layer with a narrower full width at half maximum of the X-ray rocking curve and higher electron mobility. The fabricated MIS gate structure on the AlN buffer layer successfully decreases the gate leakage current and enables a more positive gate bias of up to +4 V, which is advantageous to achieve a higher drain current. Moreover, the n-GaN capping layer between gate and ohmic electrodes helps to reduce parasitic resistance and suppress current collapse. The fabricated a-plane MIS-HFET exhibits a threshold voltage of +1.3 V with a high drain current of 112 mA/mm. The presented MIS-HFETs will be desirable in next-generation radio-frequency and power switching application fields.
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