Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors

Published 2010 View Full Article

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Title
Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 10, Pages 2434-2439
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-08-19
DOI
10.1109/ted.2010.2056151

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