Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors

标题
Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 10, Pages 2434-2439
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-08-19
DOI
10.1109/ted.2010.2056151

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