Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Authors

Keywords

Journal

Volume 56, Issue 11, Pages 2739-2745

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2009-09-30

DOI

10.1109/ted.2009.2030834

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