期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 56, 期 11, 页码 2739-2745出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2030834
关键词
Flash memory; GdAlOx blocking layer; polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS); retention
Aluminum-doped gadolinium oxides GdAlOx are proposed as a blocking oxide layer in charge-trap-type Flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional Al2O3 blocking layer. The optimization of Al percentage in GdAlOx, as well as charge loss mechanism in the memory cell device, has also been systematically studied.
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