Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High- $\kappa$ Blocking Oxide

Title
Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High- $\kappa$ Blocking Oxide
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 11, Pages 2746-2751
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-09-29
DOI
10.1109/ted.2009.2030833

Ask authors/readers for more resources

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started