Article
Materials Science, Ceramics
Liu Yang, Lu Youjun, Li Yanrui, Lin Liqun, Yuan Zhenxia, Huang Zhenkun
Summary: The study explored the feasibility of synthesizing HfN composite lanthanum silicate ceramics and investigated the relationship between reaction pathways in the HfO2-Si3N4 binary system and Hf-Si-La-O-N ternary system. The introduction of La2O3 promoted the formation of HfN which helped reduce the burning loss rate of ceramics. Experimental phase diagrams were proposed for both the HfO2-SiO2-La2O3 ternary system and the Hf-Si-La-O-N system.
JOURNAL OF INORGANIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
T. Patrick Xiao, Christopher H. Bennett, Sapan Agarwal, David R. Hughart, Hugh J. Barnaby, Helmut Puchner, A. Alec Talin, Matthew J. Marinella
Summary: We investigated the sensitivity of silicon-oxide-nitride-silicon-oxide (SONOS) charge trapping memory technology to heavy-ion induced single-event effects. The changes in the threshold voltage (V-T) distribution of SONOS cells were analyzed after irradiation with Kr and Ar ion beams. It was observed that direct ion strikes did not significantly affect the V-T distribution, but cells in the vicinity of ion absorption experienced a shift in V-T. These results provide new insights into the physical mechanisms underlying the V-T shift in scaled charge trap memory induced by a single heavy ion.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Article
Chemistry, Analytical
Thomas Mion, Michael J. D'Agati, Sydney Sofronici, Konrad Bussmann, Margo Staruch, Jason L. Kost, Kevin Co, Roy H. Olsson III, Peter Finkel
Summary: Magnetoelectric-based magnetometers are attracting attention due to their ultra-low-power systems and high sensitivity. By optimizing the design and using appropriate materials, the performance of these sensors can be improved.
Article
Materials Science, Multidisciplinary
John L. Lyons, Chris G. Van de Walle
Summary: The research reveals that self-trapped holes in AlN are metastable in bulk material, but become trapped in the presence of acceptor impurities and isovalent elements, leading to broad luminescence. Additionally, hole trapping significantly contributes to the large ionization energies for acceptors in AlN.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Engineering, Electrical & Electronic
R. A. Izmailov, B. J. O'Sullivan, M. Popovici, V. V. Afanas'ev
Summary: The study investigates electron trapping in ferroelectric and non-ferroelectric HfO2-based layers at room temperature through charge injection and photodepopulation techniques. Comparisons of trapped electron energy distribution and density in differently processed samples show insignificant impact of Al and Si doping on trapping properties, suggesting the intrinsic nature of observed traps. The volume concentration of deep traps, mostly distributed energetically between 2 and 3.5 eV below the HfO2 conduction band, is found to be in the range of 1019 cm-3.
SOLID-STATE ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Yeoungjin Chang, Ravindra Naik Bukke, Jinbaek Bae, Jin Jang
Summary: This study investigates the use of a low-temperature solution-processed HfZrOx gate insulator to enhance the performance of LaZnO TFTs. The optimized HfZrO-250°C GI-based LaZnO TFT exhibits excellent electrical properties and can be widely used in the field of flexible electronics.
Article
Chemistry, Inorganic & Nuclear
Byeong Guk Ko, Chi Thang Nguyen, Bonwook Gu, Mohammad Rizwan Khan, Kunwoo Park, Hongjun Oh, Jungwon Park, Bonggeun Shong, Han-Bo-Ram Lee
Summary: This study investigates the effects of counter reactants on surface termination and growth characteristics of ALD HfO2 thin films. By varying the combination and sequence of exposure to reactants, the film growth behaviors and properties can be controlled. XPS and DFT simulations show that the changes in film properties are attributed to the surface terminations formed from different counter reactant combinations.
DALTON TRANSACTIONS
(2021)
Article
Nanoscience & Nanotechnology
Huiren Peng, Hongjun Liu, Xuhang Ma, Xing Cheng
Summary: By inserting a HfAlO (x) layer between the InGaZnO layer and the bottom Pt electrode in amorphous IGZO memory device, the resistive switching (RS) performance is significantly improved. The device with the HfAlO (x) layer exhibits lower switching voltages, faster switching speeds, lower switching energy, lower power consumption, improved uniformity of switching voltage and resistance state. Additionally, it shows long retention time, high on/off ratio, and endurance over 10(3) cycles at atmospheric environment.
Article
Chemistry, Physical
Fatemeh Ashouri, Mehdi Khoobi, Mohammad Reza Ganjali, Meisam Sadeghpour Karimi
Summary: In this study, nanoparticles were synthesized using a simple microwave method and decorated with graphene oxide and carbon nitride for water detoxification. The prepared nanomaterials exhibited excellent photocatalytic activity under visible light irradiation and showed remarkable stability and recyclability.
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY
(2023)
Article
Chemistry, Multidisciplinary
Zhenhai Li, Jinchen Wei, Jialin Meng, Yongkai Liu, Jiajie Yu, Tianyu Wang, Kangli Xu, Pei Liu, Hao Zhu, Shiyou Chen, Qing-Qing Sun, David Wei Zhang, Lin Chen
Summary: The influence of aluminum content in HfAlO thin films on the ferroelectric characteristics of HfAlO-based FTJs was investigated. The HfAlO device with a Hf/Al ratio of 34:1 showed the highest remanent polarization and excellent memory characteristics, indicating the best ferroelectricity among the investigated devices. First-principal analyses confirmed that the HfAlO thin films with a Hf/Al ratio of 34:1 promoted the formation of the orthorhombic phase and reduced alumina impurities, enhancing the ferroelectricity of the device.
Article
Engineering, Electrical & Electronic
G. Vinuesa, O. G. Ossorio, H. Garcia, B. Sahelices, H. Castan, S. Duenas, M. Kull, A. Tarre, T. Jogiaas, A. Tamm, A. Kasikov, K. Kukli
Summary: In this paper, the electrical characterization of HfO2:Al2O3 based metal-insulator-metal structures prepared using atomic layer deposition is reported. The study reveals the dependence of electrical behavior on the HfO2:Al2O3 cycle ratio and proposes an explanation for the differences in Resistive Switching properties based on the distribution of HfAlOx layers. The paper also discusses the dependence of Resistive Switching properties on the growth temperature of the samples.
SOLID-STATE ELECTRONICS
(2021)
Article
Multidisciplinary Sciences
Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Cheol Seong Hwang, Hangbing Lyu
Summary: Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local shifting of two oxygen positions within the unit cells of a ferroelectric thin film. Reversible transition between polar and antipolar phases was induced by applying appropriate voltages. Fatigue and rejuvenation phenomena were observed.
NATURE COMMUNICATIONS
(2022)
Review
Crystallography
Wannian Fang, Qiang Li, Jiaxing Li, Yuxuan Li, Qifan Zhang, Ransheng Chen, Mingdi Wang, Feng Yun, Tao Wang
Summary: The application of deep ultraviolet detection (DUV) in military and civil fields has gained increasing attention from researchers. Inorganic materials are widely used in DUV detection due to their good stability and controllable growth, compared to the complex molecular structure and poor stability of organic materials. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the development of high-performance DUV photodetectors with different geometries, overcoming disadvantages in traditional detectors. This article provides a brief introduction to the development history and types of DUV detectors, and comprehensively summarizes and reviews typical UWBG detection materials and their methods of preparation, as well as their research and application status, including III-nitride semiconductors, gallium oxide, diamond, etc. Additionally, problems related to DUV detection materials, such as material growth, device performance, and future development, are discussed.
Article
Materials Science, Multidisciplinary
Dan Wang, Xiaodan Wang, Hai Ma, Xiaodong Gao, Jiafan Chen, Shunan Zheng, Hongmin Mao, Huajun Chen, Xionghui Zeng, Ke Xu
Summary: A series of Dy3+ and Eu3+ implanted AlN films grown by HVPE method were prepared and their crystal structure, cathodoluminescence spectra, energy transfer mechanism and chromaticity properties were investigated. Results showed that the luminescence color of the films can be effectively controlled by changing the fluence of Eu3+.
Article
Materials Science, Multidisciplinary
Ladislav Celko, Serhii Tkachenko, Mariano Casas-Luna, Lucie Dyckova, Vendula Bednarikova, Michaela Remesova, Pavel Komarov, Andrea Deak, Matej Balaz, Deborah Crawford, Sebastian Diaz-de-la-Torre, Ede Bodoki, Jaroslav Cihlar
Summary: The study focuses on preparing Mo-10 vol%La2O3 and Mo-10 vol% La2Zr2O7 composite powders via low- and high-energy ball milling, with the high-energy mode resulting in more homogenous powder agglomerates and uniform ceramic phase distribution. The Mo-10 vol% La2Zr2O7 composite powder exhibits better thermal stability and less formation of intermediate phases compared to Mo-La2O3 composite powder, making it a promising material for high-temperature applications.
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS
(2022)