Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes

Published 2008 View Full Article

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Title
Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 3, Pages 810-815
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-03-01
DOI
10.1109/ted.2007.914833

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