NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

(2010) Kuk-Hwan Kim et al.   APPLIED PHYSICS LETTERS

Phase-change random access memory: A scalable technology

(2010) S. Raoux et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

(2010) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

(2008) Kwang-Jin Lee et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Architecting Efficient Interconnects for Large Caches with CACTI 6.0

(2008) N. Muralimanohar et al.   IEEE MICRO

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology