Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

Authors

Keywords

Journal

Volume 47, Issue 9, Pages 2258-2265

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2012-06-28

DOI

10.1109/jssc.2012.2198969

References

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