Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 5, Pages 563-565Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2304513
Keywords
High-speed; green GaN-based LEDs; 3-dB modulation bandwidth; plastic optical fiber (POF); visible light communication (VLC)
Categories
Funding
- National Science Council [102-2622-E-007-025-CC2]
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Light-emitting diode (LED) is one of the most important light sources due to its low power consumption and long lifetime. In this letter, we present the high-frequency characteristics of GaN-based green LEDs with different aperture diameters. In order to get higher current density, we use ring-shaped electrode to confine the current injection. Unlike conventional LEDs, we only use its natural feature to get a high modulation bandwidth. The LEDs investigated have a peak emission wavelength of 500 nm. The highest optical 3-dB modulation bandwidth is similar to 463 MHz at 50 mA for the 500-nm green GaN-based LED with an aperture diameter of 75 mu m. It is the highest bandwidth yet reported for the green GaN-based LEDs. The LED also exhibits a relatively high output power of similar to 1.6 mW at 50 mA as compared with other high-speed LEDs. Such the LEDs can be applied to plastic optical fiber and visible light communication in the future.
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