High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric

Published 2014 View Full Article

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Title
High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 5, Pages 554-556
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-03-15
DOI
10.1109/led.2014.2310120

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