Effect of Nitrous Oxide High Pressure Annealing on the Performance of Low Temperature, Soluble-Based IZO Transistors

Published 2014 View Full Article

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Title
Effect of Nitrous Oxide High Pressure Annealing on the Performance of Low Temperature, Soluble-Based IZO Transistors
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 4, Pages 455-457
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-02-08
DOI
10.1109/led.2014.2302841

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