Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1266-1268Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2365194
Keywords
High mobility; atomic layer deposition; ZnO; hydroxyl residuals; thin-film transistors (TFTs)
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Funding
- National Natural Science Foundation of China [51102048, 61376008]
- Specialized Research Fund for the Doctoral Program [20110071120017]
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The impacts of postdeposition annealing in O-2 on the electrical performance of atomic-layer-deposited ZnO thin-film transistors (TFTs) have been investigated. The TFTs are fabricated on transparent quartz substrates with Al2O3 dielectrics, ZnO active layers, and Cr/Au electrodes. The best field-effect mobility of 21.3 cm(2)/Vs and a large ON/OFF current ratio of 10(7) are obtained under 400 degrees C annealing treatment in O-2. Furthermore, analysis indicates that reduction of OH bonds in both ZnO and Al2O3 layers is the key issue to achieve the excellent properties.
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