Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 1, Pages 96-98Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2289309
Keywords
Doping free; MoO3; LiF; i-a-Si solar cells
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Funding
- National Fusion Research Institute of Korea
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We fabricated doping-free intrinsic amorphous silicon (i-a-Si) thin-film solar cells having a structure of glass/SnO2/MoO3/i-a-Si/LiF/Al. The short-circuit current density of the cell markedly increased while the open-circuit voltage and fill factor were low due to a lower work-function of the MoO3 than that of a conventional amorphous silicon carbide film. To solve these drawbacks, we UV-treated on the MoO3 layer, obtaining a greatly enhanced conversion efficiency of 6.42%.
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